描述
Attributes Parameter Values
Product Catalog: IGBT Transistor/Module
IGBT Type: FS (Field Stop)
Power Dissipation (Pd): 28W
Collector-Emitter Breakdown Voltage (Vces): 650V
Collector Current (Ic): 15A
Collector Pulse Current (Icm): 60A
Collector Cutoff Current (Ices): 15µA
Collector-Emitter Saturation Voltage (VCE(sat)): 1.55V
Gate Threshold Voltage (Vge(th)): 5.2V
Gate Charge (Qg): 38nC@15V
Attributes Parameter Values
Input Capacitance (Cies): 905pF
Output Capacitance (Coe s): 41pF
Reverse Transfer Capacitance (Cres): 9pF
Turn-On Delay Time (Td(on)): 10ns
Turn-Off Delay Time (Td(off)): 234ns
Turn-On Loss (Eon): 250µJ
Turn-Off Loss (Eoff): 200µJ
Reverse Recovery Time (Trr): 72ns
Operating Temperature: -40℃~+150℃
